data sheet 1 of 8 rev. 02.1, 2009-02-18 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTF080101M PTF080101M package pg-rfp-10 rf characteristics two-tone measurements ( not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 28 v, i dq = 180 ma, p out = 10 w pep, ? = 960 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 16 ? ? db drain efficiency h d 35 ? ? % intermodulation distortion imd ? ? ?28 dbc high power rf ldmos field effect transistor 10 w, 450 ? 960 mhz description the PTF080101M is an unmatched 10- watt goldmo s ? fet intended for class ab base station applications in the 450 mhz to 960 mhz band. this ldmos device offers excellent gain, efficiency and linearity performance in a small footprint. *see infineon distributor for future availability. gain & efficiency vs. output power v dd = 28 v, i dq = 180 ma, ? = 960 mhz 14 15 16 17 18 19 20 21 20 25 30 35 40 45 output power (dbm) gain (db) 0 10 20 30 40 50 60 70 drain efficiency (%) efficiency gain features ? typical edge performance - average output power = 5.0 w - gain = 19 db - efficiency = 37% - evm = 2.0% ? typical cw performance - output power at p?1db = 12.5 w - gain = 18 db - efficiency = 50% ? integrated esd protection: human body model class 1 (minimum) ? excellent thermal stability ? low hci drift ? capable of handling 10:1 vswr @ 28 v, 10 w (cw) output power ? pb-free and rohs compliant
data sheet 2 of 8 rev. 02.1, 2009-02-18 PTF080101M *see infineon distributor for future availability. dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 a v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 a r ds(on) ? 0.83 ? w operating gate voltage v ds = 28 v, i dq = 180 ma v gs 2.5 3.2 4.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 150 c total device dissipation p d 18.8 w above 25c derate by 0.15 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 10 w dc) r q jc 6.5 c/w ordering information type package outline package description marking PTF080101M pg-rfp-10 molded plastic, smd 0081
data sheet 3 of 8 rev. 02.1, 2009-02-18 PTF080101M typical performance (data taken in production test fixture) broadband performance v dd = 28 v, i dq = 180 ma, p out = 40 dbm -20 -10 0 10 20 30 880 900 920 940 960 980 1000 frequency (mhz) gain (db), return loss (db) 10 20 30 40 50 60 drain efficiency (%) gain return loss efficiency typical edge performance v dd = 28 v, i dq = 180 ma, ? = 959.8 mhz 0 1 2 3 4 5 28 30 32 34 36 38 output power (dbm) rms evm (average %) . 0 10 20 30 40 50 drain efficiency (%) evm efficiency edge modulation spectrum performance v dd = 28 v, i dq = 180 ma, ? = 959.8 mhz -80 -70 -60 -50 -40 -30 26 28 30 32 34 36 38 40 output power (dbm) modulation spectrum (dbc) 200 khz 400 khz 600 khz two-tone drive-up v dd = 28 v, i dq = 180 ma, ? = 960 mhz, 1 mhz tone spacing -70 -60 -50 -40 -30 -20 20 25 30 35 40 output power, avg. (dbm) imd (dbc) 0 10 20 30 40 50 drain efficiency (%) efficiency im3 im7 im5
data sheet 4 of 8 rev. 02.1, 2009-02-18 PTF080101M gate-source voltage vs. temperature voltage normalized to typical gate voltage, series show current. 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 1.04 -20 0 20 40 60 80 100 case temperature (oc) normalized bias voltage 0.05 0.28 0.51 0.74 0.97 1.2 typical performance (cont.) broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 820 3.73 2.10 10.41 3.92 840 3.81 2.22 9.61 4.14 860 3.83 2.30 9.00 4.48 880 3.76 2.39 8.55 4.89 900 3.61 2.50 8.24 5.32 920 3.37 2.69 8.02 5.76 940 3.08 2.96 7.89 6.20 960 2.76 3.35 7.84 6.63 980 2.43 3.86 7.85 7.04 1000 2.13 4.47 7.91 7.43
data sheet 5 of 8 rev. 02.1, 2009-02-18 PTF080101M reference circuit schematic for ? = 960 mhz circuit assembly information dut PTF080101M ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 960 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.016 l , 50.0 w 2.77 x 1.27 0.109 x 0.050 l 2 0.132 l , 75.0 w 25.65 x 0.64 1.010 x 0.025 l 3 0.028 l , 50.0 w 4.83 x 1.27 0.190 x 0.050 l 4 0.101 l , 50.0 w 17.20 x 1.27 0.677 x 0.050 l 5 0.015 l , 10.0 w 2.39 x 11.99 0.094 x 0.472 l 6 0.086 l , 10.0 w 13.08 x 11.99 0.515 x 0.472 l 7 0.050 l , 10.0 w 7.65 x 11.99 0.301 x 0.472 l 8 0.106 l , 73.0 w 18.49 x 0.64 0.728 x 0.025 l 9 0.086 l , 73.0 w 15.16 x 0.64 0.597 x 0.025 l 10 0.020 l , 29.0 w 3.30 x 3.30 0.130 x 0.130 l 11 0.061 l , 12.5 w 9.42 x 9.19 0.371 x 0.362 l 12 0.111 l , 12.5 w 17.53 x 9.19 0.690 x 0.362 l 13 0.022 l , 12.5 w 3.35 x 9.19 0.132 x 0.362 l 14 0.028 l , 73.0 w 4.90 x 0.64 0.193 x 0.025 l 15 0.100 l , 73.0 w 17.53 x 0.64 0.690 x 0.025 l 16 0.070 l , 50.0 w 11.94 x 1.22 0.470 x 0.048 l 17 0.016 l , 50.0 w 2.67 x 1.22 0.105 x 0.048 1 electrical characteristics are rounded. rf_in rf_out 0 8 0 1 0 1 m _ s c h r5 10 v 36pf 5.1pf l 3 dut c7 l 8 c8 r8 l 9 10 v l 4 l 5 l 6 l 7 10pf c9 l 1 l 2 36pf 36pf 10f 1f v dd l 15 c11 c13 c12 c15 50v l 10 l 11 l 12 l 13 l 16 4.5pf c14 l 17 3.1pf c16 l 14 36pf c10 10f 35v c4 36pf c5 0.1f r7 c6 r6 5.1k v 5.1k v r3 1k v r4 2k v c3 0.001f bcp56 q1 r2 1.3k v r1 1.2k v lm7805 qq1 c2 0.001f v dd c1 0.001f reference circuit
data sheet 6 of 8 rev. 02.1, 2009-02-18 PTF080101M reference circuit (cont.) reference circuit assembly diagram (not to scale)* *gerber files for this circuit available on request component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key pcs6106tr-nd c5 capacitor, 0.1 f digi-key pcc104bct-nd c6, c8, c10, c11, ceramic capacitor, 36 pf atc 100b 360 c15 c7 ceramic capacitor, 5.1 pf atc 100b 5r1 c9 ceramic capacitor, 10 pf atc 100b 100 c12 tantalum capacitor, 10 f, 50 v garrett electronics tps106k050r0400 c13 capacitor, 1.0 f toshiba c4532xtrza105m c14 ceramic capacitor, 4.5 pf atc 100b 4r5 c16 ceramic capacitor, 3.1 pf atc 100b 3r1 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor 1 k-ohms digi-key p1kect-nd r4 potentiometer 2 k-ohms digi-key 3224w-202etr-nd r5, r8 chip resistor 10 ohms digi-key p10ect-nd r6, r7 chip resistor 5.1 k-ohms digi-key p5.1kect-nd 080101m_c_02 080101m_assy rf_in rf_out lm 10 35v + c5 r8 r4 q1 qq1 c3 c1 r1 c2 r2 r5 c4 r3 c6 r6 r7 c7 c9 c8 c10 c11 c14 c12 c13 c16 c15 v dd v dd
data sheet 7 of 8 rev. 02.1, 2009-02-18 PTF080101M m pg-rfp-10 0 . 8 5 0 . 1 0 . 0 9 3 0.1 0.42 0 . 1 2 5 6 m a x . h 0.1 a 4.9 0.25 a b c 0.08 m 0.22 0.05 0 . 1 5 m a x . 1 . 1 m a x . a c 0.5 10 6 5 1 3 0.1 b index marking a b c +0.15 ?0.10 + 0 . 0 8 ? 0 . 0 5 notes: unless otherwise specified 1. dimensions are mm 2. lead thickness: 0.09 3. pins: 1 ? 5 = gate, underside = source, 6 ? 10 = drain package outline specifications package pg-rfp-10 (tssop-10 outline) find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products
data sheet 8 of 8 rev. 02.1, 2009-02-18 PTF080101M confidential?limited distribution revision history: 2009-02-18 data sheet previous version: 2005-12-16, data sheet page subjects (major changes since last revision) 4 add temperature graph and impedance information. 5 ? 6 add circuit information. all remove preliminary status 6 fixed typing error we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-goldmos) usa or +1 408 776 0600 international goldmos ? is a registered trademark of infineon technologies ag. edition 2009-02-18 published by infineon technologies ag 81726 munich , germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
